symbol v dss i d i dm , l lm v gs p d t j ,t stg t l parameter drain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 and inductive current clamped gate-source voltage total power dissipation @ t c = 25 c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. static electrical characteristics characteristic / test conditions / part number drain-source breakdown voltage (v gs = 0v, i d = 250 m a) on state drain current 2 (v ds > i d (on) x r ds (on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d [cont.]) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) thermal characteristics symbol r q jc r q cs characteristic junction to case case to sink (use high efficiency thermal joint compound and planer heat sink surface.) min typ max 0.24 0.06 unit c/w symbol bv dss i d (on) r ds (on) i dss i gss v gs (th) min typ max apt40m75jn 400 APT40M90JN 400 apt40m75jn 56 APT40M90JN 51 apt40m75jn 0.075 APT40M90JN 0.090 250 1000 100 24 unit volts amps ohms m a na volts unit volts amps volts watts w/ c c apt apt 40m75jn 40m90jn 400 400 56 51 224 204 30 520 4.16 -55 to 150 300 maximum ratings all ratings: t c = 25 c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. sot-227 g s s d apt40m75jn 400v 56.0a 0.075 w APT40M90JN 400v 51.0a 0.090 w single die isotop ? package "ul recognized" file no. e145592 (s) isotop n- channel enhancement mode high voltage power mosfets power mos iv 050-4037 rev e usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 g d s
min typ max apt40m75jn 56 APT40M90JN 51 apt40m75jn 224 APT40M90JN 204 1.8 370 740 816 dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25 c r g = 0.6 w min typ max 5630 6800 1320 1950 510 720 241 370 34 50 117 180 16 32 31 62 45 70 13 26 unit pf nc ns apt40m75/40m90jn characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) reverse recovery time (i s = -i d [cont.], dl s /dt = 100a/ m s) reverse recovery charge (i s = -i d [cont.], dl s /dt = 100a/ m s) source-drain diode ratings and characteristics symbol i s i sm v sd t rr q rr unit amps volts ns m c characteristic / test conditions internal drain inductance (measured from drain terminal to center of die.) internal source inductance (measured from source terminals to source bond pads) rms voltage (50-60 hz sinusoidal waveform from terminals to mounting base for 1 min.) drain-to-mounting base capacitance (f = 1mhz) maximum torque for device mounting screws and electrical terminations. unit nh volts pf in-lbs package characteristics symbol l d l s v isolation c isolation torque min typ max 3 5 2500 35 13 1 repetitive rating: pulse width limited by maximum junction temperature. see transient thermal impedance curve. (fig.1) 2 pulse test: pulse width < 380 m s, duty cycle < 2% 3 see mil-std-750 method 3471 050-4037 rev e 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.3 0.1 0.05 0.01 0.005 0.001 z q jc , thermal impedance ( c/w) note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss (on), drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 40 80 120 160 200 0 4 8 12 16 20 0 2 4 6 8 10 0 50 100 150 200 250 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt40m75/40m90jn i d = 0.5 i d [cont.] v gs = 10v 200 160 120 80 40 0 100 80 60 40 20 0 60 50 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0.0 200 160 120 80 40 0 3.0 2.5 2.0 1.5 1.0 0.0 1.2 1.1 1.0 0.9 0.8 0.7 1.4 1.2 1.0 0.8 0.6 0.4 v ds > i d (on) x r ds (on)max. 250 m sec. pulse test @ <0.5 % duty cycle t j = 25 c 250 m sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 0.5 i d [cont.] apt40m75jn v gs =10 & 15v 9v 8v 7v 6v 5v 5v 6v 7v 8v 9v 10v t j = -55 c t j = +25 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c v gs =20v v gs =10v APT40M90JN v gs =15v 050-4037 rev e
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 400 .1 .5 1 5 10 50 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0 apt40m75/40m90jn t c =+25 c t j =+150 c single pulse 500 100 50 10 5 1 .5 .1 20 16 12 8 4 0 20,000 10,000 5,000 1,000 500 100 200 160 120 80 40 0 i d = i d [cont.] t j =+25 c apt40m75jn APT40M90JN apt40m75jn APT40M90JN operation here limited by r ds (on) 10 m s 100 m s 1ms 10ms 100ms dc c rss c oss v ds =80v v ds =200v v ds =320v t j =+150 c t j =-55 c c iss 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * source source terminals are shorted internally. current handling capability is equal for either source terminal. sot-227 (isotop ? ) package outline isotop ? is a registered trademark of sgs thomson. apt reserves the right to change, without notice, the specifications and information contained herein. 050-4037 rev e
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